| PART |
Description |
Maker |
| MIC4421A MIC4421AAM MIC4421ABM MIC4421ABN MIC4421A |
High peak-output current: 9A Peak (typ.)
9A Peak Low-Side MOSFET Driver Bipolar/CMOS/DMOS Process
|
MIC GROUP RECTIFIERS
Micrel Semiconductor
|
| BT137F-600 BT137F |
600V Vdrm 8A Triac, 1.6V Peak On-State Voltage, 1.0mA Repetitive Peak Off-State Current
Bi-Directional Triode Thyristor
|
SEMIWELL[SemiWell Semiconductor]
|
| ES51966Q ES51966 ES51966V |
4 3/4 and 5 3/4 A/D (Peak & Cap)
44,000/440,000-COUNT DUAL-SLOPE ANALOG-TO-DIGITAL CONVERTER(ADC) WITH X10 AND PEAK HOLD FUNCTIONS
|
Cyrustek Co
ETC
|
| APTB1615EYC |
1.6 x 1.5 mm bi-color SMD chip LED lamp. High efficiency red (peak wavelength 627 nm), yellow (peak wavelength 590 nm). Lens type water clear.
|
Kingbright Electronic
|
| OED-PT8L OED-PT304R2 OED-PT23G |
PHOTOTRANSISTOR | DARLINGTON | 800NM PEAK WAVELENGTH | 5M | LED-2B
PHOTOTRANSISTOR | DARLINGTON | 850NM PEAK WAVELENGTH | 5M | LED-7B
PHOTOTRANSISTOR | DARLINGTON | 800NM PEAK WAVELENGTH | 5M | LED-7B 光电晶体管|达林顿| 800NM峰值波长| 500万|发光二极 7B
|
Lumex, Inc.
|
| E164 E187 E188 E189 |
T-3 1/4 green jumbo, flashing led (10mm). Lens diffused, peak wave length 565nm.
T-3 1/4 red & green jumbo, bi-color led (10mm). Lens white, peak wave length at 20 mA 660nm. Lens diffused, peak wave length 565nm.
T-3 1/4 green & yellow jumbo, bi-color led (10mm). Lens white, peak wave length at 20 mA 565nm. Lens diffused, peak wave length 590nm.
|
Gilway Technical Lamp
|
| P6KE12 P6KE15 P6KE36 P6KE6.8 P6KE18 P6KE7.5 P6KE8. |
600W Peak Power / 5.0W Steady State 600W Peak Power TVS
|
SeCoS Halbleitertechnologie GmbH
SeCoS Halbleitertechnologie...
SeCoS Halbleitertechnol...
|
| 30KW258A 30KW168 30KW168A 30KW216 30KW240 30KW240A |
258.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
168.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
240.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
120.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
198.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
270.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
156.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
132.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
288.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
102.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
|
MDE Semiconductor
|
| ZXGD3001E6 ZXGD3001E6TA ZXGD3001E6-15 |
9A(PEAK) GATE DRIVER IN SOT26
9A(peak) Gate driver in SOT23-6
|
Diodes Incorporated
Zetex Semiconductors
|
| ZXGD3002E6 ZXGD3002E6TA ZXGD3002E6-15 |
9A(PEAK) GATE DRIVER IN SOT26
9A(peak) Gate driver in SOT23-6
|
Diodes Incorporated
Zetex Semiconductors
|
| BDY38 |
Metal Oxide Varistor (MOV); Voltage Rating AC, Vrms:35Vrms; Voltage Rating DC, Vdc:45VDC; Peak Surge Current (8/20uS), Itm:2000A; Clamping Voltage 8/20us Max :110V; Peak Energy (10/1000uS):30J; Capacitance, Cd:10000pF 晶体管|晶体管|叩| 40V的五（巴西）总裁| 6A条一（c）|
|
Vishay Intertechnology, Inc.
|
| BDX91 |
Metal Oxide Varistor (MOV); Voltage Rating AC, Vrms:300Vrms; Voltage Rating DC, Vdc:405VDC; Peak Surge Current (8/20uS), Itm:1200A; Clamping Voltage 8/20us Max :775V; Peak Energy (10/1000uS):25J; Capacitance, Cd:70pF
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package.
|
Seme LAB
|
